| 摘要 |
PURPOSE:To form phase shift patterns without damaging a light shielding film at the time of dry etching of shifters. CONSTITUTION:A first resist 5 is applied to a mask substrate constituted by laminating an optically transparent substrate 4 which is inorg. and is used as phase shifters and the light shielding film on an optically transparent substrate 1 and is patterned by exposing. The light shielding film 2 is removed with this resist as a mask and thereafter, a second resist 7 is applied thereto without removing the first resist 5. After this resist is exposed and developed, the transparent film 4 which is the phase shifters is removed by the prescribed amt. with the first resist 5 and the second resist 7 as a mask, by which the phase shifter patterns are formed. |
