HIGH VOLTAGE TERMINATION HAVING BURIED FIELD SHAPING REGION

摘要

PROBLEM TO BE SOLVED: To increase breakdown voltage at the junction of a semiconductor device by forming a ring buried completely at a specified depth in a second conductivity type device region within a first conductivity type substrate while spaced apart from the device region. SOLUTION: A field forming region 104 is formed in an epitaxial layer 92, while spaced apart from a device region 96, by implanting a dopant at a specified dose Q and a buried ring is formed on the underside. When the voltage is increased, a depletion region 106 is influenced by the buried field forming region 104 to generate a depletion forming region having a large curvature 110 extending to the underside of the field forming region 104 buried in the lateral direction from the device region 96 on the surface of the epitaxial layer 92. Breakdown voltage at the junction of a semiconductor device can be increased through the large curvature.