| 摘要 |
PROBLEM TO BE SOLVED: To provide a device and a method for efficiently ashing/removing a photoresist adhered to the side wall part of a semiconductor substrate. SOLUTION: The plasma ashing method is to heat the semiconductor substrate 5 by a heater board 9 being a heating mechanism and to etch the photoresist by the down flow of an oxygen radical generation mechanism. In such a case, the substrate is installed on quartz pins 16 being supporting stands smaller than the semiconductor substrate 5 and it is spatially detached from the heat board 9 being the heating mechanism. Thus, the photoresist 22 on the side of the semiconductor substrate is etched. |
