发明名称 |
Method of depositing a platinum film for capacitor electrode |
摘要 |
<p>A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film. <IMAGE> <IMAGE> <IMAGE> <IMAGE></p> |
申请公布号 |
EP0855738(A2) |
申请公布日期 |
1998.07.29 |
申请号 |
EP19980400033 |
申请日期 |
1998.01.09 |
申请人 |
TONG YANG CEMENT CORPORATION |
发明人 |
PARK, DONG YEON;LEE, DONG SU;WOO, HYUN JUNG;CHUN, DONG IL;YOON, EUI JUN |
分类号 |
C23C14/14;C23C14/16;C23C14/58;H01L21/02;H01L21/285;H01L21/8242;H01L21/8246;H01L27/10;H01L27/105;H01L27/108;(IPC1-7):H01L21/320 |
主分类号 |
C23C14/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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