发明名称 Low voltage CMOS process with individually adjustable LDD spacers
摘要 The present invention relates to a method and device for providing CMOS logic which can be operated at various operating voltages, without resulting in unbalanced operation of n-channel and p-channel CMOS transistors. In accordance with the present invention, CMOS circuitry can be provided that is operable over a range of voltages (e.g., a range from below 3 volts to a range over 5 volts) without producing unbalanced operation of n-channel and p-channel transistors. Thus, integrated circuits formed in accordance with the present invention can be operated at different voltage power sources without requiring a redesign or relayout of the integrated circuit. In accordance with the present invention, CMOS transistors can be fabricated without increased fabrication complexity to provide transistors which operate within a relatively safe region of their operating characteristics and which operate with a speed that is unaffected by the reduced voltage supply (i.e., no need to accommodate timing errors since both n-channel and p-channel transistor performance remains balanced).
申请公布号 US5786247(A) 申请公布日期 1998.07.28
申请号 US19960762411 申请日期 1996.12.09
申请人 VLSI TECHNOLOGY, INC. 发明人 CHANG, KUANG-YEH;RAO, RAMACHANDR A.
分类号 H01L27/092;(IPC1-7):H01L21/823 主分类号 H01L27/092
代理机构 代理人
主权项
地址