| 摘要 |
<p>In a metal-semiconductor-metal (MSM) photodetector having an absorbent layer, a barrier layer of higher forbidden band energy on which Schottky electrodes are deposited and a graded composition transition layer, a doping level is located near the interface between the graded composition transition layer and the absorbent layer. Preferably, the photodetector consists of an InP substrate bearing a layer stack of an AlInAs buffer layer, an AlGaInAs graded composition layer, a GaInAs active absorbent layer (2), a p-type doping level (7), an AlGaInAs graded composition layer (5) and an AlInAs or InP barrier layer (6) on which the electrodes (1) are deposited.</p> |
