| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to arrange elements in a fine pitch in a semiconductor device and to make it possible to manufacture more efficiently the semiconductor device without generating a crack in an insulating film consisting of a silicon nitride film or the like, by a method wherein a bump electrode is formed by plating via the etched part of a thick photoresist film. SOLUTION: An intermediate connection film 15 and a base layer 16a are formed on an insulating film 14 and an electrode pad 13 exposed through an opening formed in the film 14. Then, a photoresist liquid of a viscosity of more than several hundreds of CPS is applied on the layer 16a to form a photoresist film 19 thicker than the height of a bump electrode. Then, the film 19 is etched in a size, in which the peripheral part of the pad 13 is positioned, between the opening formed in the film 14 and the peripheral part of the pad 13. After that, the bump electrode 16b is formed up to a position, where the upper surface of the electrode 16b becomes equal with the upper surface of the film 19, or up to a position lower than the above position by plating using the same material as that for the layer 16a via the etched part of the film 19. |
