Method forming preferred orientation-controlled platinum films using nitrogen

摘要

Platinum film orientation-controlled to (111), (200) and/or (220) are provided by depositing the platinum film under an atmosphere containing nitrogen as well as an inert gas (Ar, Ne, Kr, Xe) on a substrate heated to temperature ranged from room temperature to 500 DEG C, and then annealing to substantially remove nitrogen introduced into the platinum film during the deposition thereof. The platinum film formed in this process has an excellent electrical conductivity (resistivity is lower than 15 mu OMEGA -cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, pores or pinholes.