CMOS interface circuit formed in silicon-on-insulator substrate

摘要

A CMOS circuit formed in a silicon-on-insulator (SOI) substrate includes MOSFETs having drain and body diffusions which extend through the silicon layer to the surface of the insulating layer. Each of drains of the N-channel and P-channel MOSFETs serves also as a terminal (anode or cathode) of a diode that is connected in series with the MOSFET. This structure allows the CMOS device to be fabricated as a completely symmetrical structure without adding processing steps beyond those customary in fabricating conventional CMOS devices.