发明名称 |
Plasma processing method |
摘要 |
In a plasma processing apparatus including a cylindrical electrode and plural electrodes which are disposed to face the cylindrical electrode in a circumferential direction of the cylindrical electrode, the plural electrodes are designed to have the prescribed curvature corresponding to that of the surface of the cylindrical electrode. The interval between the cylindrical electrode and the plural electrodes may be fixed or stepwise varied in the circumferential direction. The area of each of the plural electrodes may be different from that of the other electrodes.
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申请公布号 |
US5766696(A) |
申请公布日期 |
1998.06.16 |
申请号 |
US19970847497 |
申请日期 |
1997.04.25 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ITOH, KENJI |
分类号 |
H05H1/46;B01J19/08;C23C16/26;C23C16/50;C23C16/509;C23C16/54;H05H1/24;(IPC1-7):H05H1/24 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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