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发明名称
FABRICATION METHOD OF HIGH FREQUENCY BIPOLAR JUNOTION TRANSISTOR
摘要
申请公布号
KR0138650(B1)
申请公布日期
1998.06.15
申请号
KR19890008831
申请日期
1989.06.27
申请人
LG SEMICONDUCTOR CO.,LTD
发明人
CHON, YOUNG-KWON
分类号
H01L21/18;(IPC1-7):H01L21/18
主分类号
H01L21/18
代理机构
代理人
主权项
地址
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