| 摘要 |
PROBLEM TO BE SOLVED: To realize a semiconductor module which is simple in structure, small in size, and enhanced in heat dissipating properties by a method wherein a high thermal conductivity silicon nitride board which contains a specific wt.% of impurity cation element and has a specific thermal conductivity is provided, a metal circuit board is joined to the one side of the silicon nitride board where a semiconductor device is mounted, and a metal board which is bonded to a mounting board is joined to the other side of the silicon nitride board. SOLUTION: A high thermal conductivity silicon nitride board 10 contains 1.0wt.% or below, preferably 0.3wt.% or below of Li, Na, K, Fe, Ca, Sr, Ba, Mn, and B a impurity cation elements and is of thermal conductivity 60m.k or above. A copper board 3 is bonded to the front side of the silicon nitride board 10, and a semiconductor device 7 is mounted on the copper board 3 at a prescribed position. A metal 4b is joined to the rear side of the board 10. By this setup, a semiconductor module can be simplified in structure, markedly lessened in manufacturing cost, enhanced in mounting density, and improved in heat dissipating properties. |
