发明名称 |
Electrostatic discharge structure of semiconductor device |
摘要 |
An electrostatic discharge structure of a semiconductor device is provided. The structure includes a semiconductor substrate doped with P-type impurities; an N-type well formed in a predetermined region of the semiconductor substrate; a P-type pocket well formed in a predetermined region of the N-type well; an N-type active guardline formed in the surface of the N-type well and doped to a concentration higher than that of the N-type well; a P-type active guardline formed in the surface of the P-type pocket well and doped to a concentration higher than that of the P-type pocket well; and an NMOS transistor formed in a surface of the P-type pocket well. Accordingly, even though a negative voltage due to electrostatic charge is temporarily applied to the drain region of the NMOS transistor, a malfunction of an internal circuitry formed in a P-type semiconductor substrate can be prevented.
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申请公布号 |
US5760446(A) |
申请公布日期 |
1998.06.02 |
申请号 |
US19960774936 |
申请日期 |
1996.12.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG, HYANG-JA;PARK, HEE-CHOUL |
分类号 |
H01L27/04;H01L21/822;H01L27/02;H01L27/06;(IPC1-7):H01L23/62 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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