NEW METHOD TO EXTRACT ELEMENTS FROM ELECTRIC CIRCUIT, EQUIVALENTS OF MESFETS, HEMTS AND PHEMTS FIELD EFFECT-TYPE MICROWAVE TRANSISTORS, USING ONLY MEASUREMENTS IN RADIOFREQUENCY.

摘要

The invention explains how in microwave integrated electronic circuits, MESFETs, HEMTs and PHEMTs field effect-type transistors are used. For this kind of applications, these devices functioning is disclosed by means of an equivalent electric circuit. To extract said equivalent electric circuit elements, electric measurements on wide band (DC-RF) (method 1), electric measurements in RF radio-frequency and utilization of optimization mathematical measurements (method II) are utilized until now. This patent objective is to show a new method different from methods I and II, to extract equivalent electric circuit elements. This new method uses only measurements in radio-frequency on different polarization points and on different ways of transistor functioning.