| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern satisfactory in residual film ratio even in the case of forming an extrafine pattern of half micron or below and excellent in development contrast, exposure allowance, focus-depth-width characteristic and cross-sectional shape by adding a specific halogenated sulfonic acid to an alkali soluble resin and a quinone azide group-containing compound. SOLUTION: The alkali soluble resin, the quinone azide group-containing compound and the specific halogenated sulfonic acid are added. That is, a positive photoresist composition constituted so as to contain the alkali soluble resin, the quinone azide group-containing compound and at least one kind of the halogenated sulfonic acid expressed by formula, R<1> -SO2 -X, is used. In the formula, R<1> represents an alkyl group, a substituted alkyl group, an alkenyl group, an aryl group or a substituted aryl group, X represents a halogen atom. |
