COMPOSITE MEMORY MATERIAL COMPRISING A MIXTURE OF PHASE-CHANGE MEMORY MATERIAL AND DIELECTRIC MATERIAL

摘要

A composite memory material (36) comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures of alloys thereof. A single cell memory element (30) comprising the aforementioned composite memory material (36), and a pair of spacedly disposed contacts (6, 8).