| 摘要 |
PROBLEM TO BE SOLVED: To improve dielectric characteristics and reliability of a semiconductor, by sequentially vapor depositing an alumina buffer layer, platinum electrode, lead titanate acceleration layer and PZT thin film on a semiconductor substrate. SOLUTION: An alumina (Al2 O3 ) buffer layer 2 is vapor deposited on a semiconductor substrate 1. Next, a platinum electrode 3 is vapor deposited on the alumina (Al2 O3 ) buffer layer 2. Then, lead titanate (PbTiO3 ) accelerating layer 4 is vapor deposited on the platinum electrode 3. And a PZT thin film 5 is formed by vapor deposition on this lead titanate (PbTiO3 ), thereby forming a nonvolatile memory thin film. Therefore, adhesive power between the semiconductor substrate 1 and the platinum electrode 3 is increased by the buffer layer 2 and the reaction between the semiconductor substrate 1 and the PZT thin film 5 is restricted, so that the electrical characteristics of the nonvolatile memory thin film and the crystallization of the PZT thin film 5 are stabilized, and the forming temperature of perovskite phase drops. Also, the formation of second phase is prevented by the lead titanate accelerating layer. |
