Vertical-cavity surface-emitting laser and method for manufacturing the same

摘要

A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films (11,13), an active layer (15), and third and fourth semiconductor multi-layered films (12,14) which are piled up on a GaAs substrate (16) in that order. Furthermore, the first film (11) is formed by piling up Alx-1Ga1-x1As layers (0 ≤ x1 ≤ 1) and A1x2Ga1-x2As layers (0 ≤ x2 ≤ 1) one after the other by turns. The second film (13) is formed by piling up Inx3Ga1-x3Asy3P1-y3 layers (0 ≤ x3, y3 ≤ 1) and Inx4Ga1-x4Asy4P1-y4 layers (0 ≤ x4, y4 ≤ 1) one after the other by turns. The active layer (15) is provided as an Inx5Ga1-x5Asy5P1-y5 layer (0 ≤ x5, y5 ≤ 1). The third film (14) is formed by piling up Inx6Ga1- x6Asy6P1-y6 layers (0 ≤ x6, y6 ≤ 1) and Inx7Ga1- x7Asy7P1-y7 layers (0 ≤ x7, y7 ≤ 1) one after the other by turns. The fourth film (12) is formed by piling up Alx8Ga1-x8As layers (0 ≤ x8 ≤ 1) and Alx9Ga1-x9As layers (0 ≤x9 ≤1) one after the other by turns. In each film, each layer has a thickness corresponding to a value obtained by dividing an emission wavelength by a refractive index and 4.