Ohmic electrode, its fabrication method and semiconductor device

摘要

An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors is provided to have satisfactory practical characteristics. Provided on an n+-type GaAs substrate is an ohmic electrode in which an n++-type regrown GaAs layer regrown from the n+-type GaAs substrate and a NiGe film containing particles of a precipitate composed of alpha '-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n+-type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400 DIFFERENCE 750 DEG C. for several seconds to several minutes.