FORMATION OF THIN FILM

摘要

PURPOSE:To obtain a diamond or i-carbon film of a large area under various conditions with high reproducibility by forming a thin film with ion species, active species or the like excited by specified high density plasma in a gas for forming a thin film. CONSTITUTION:A substrate 10 for forming a thin film is placed on a substrate heater 6 and heated to about 500 deg.C. Gaseous hydrogen is introduced into a high density plasma generating region 2 through a gas introducing system 7 and 500W microwaves and about 1.5kG magnetic field are applied to the region 2 from the outside to generate high density plasma. Hydrogen atoms or electrons having high energy are introduced into a reaction chamber 1 from the region 2 by a divergent magnetic field and cause a nonelastic collision with gaseous methane introduced into the chamber 1 through a gas system 8 to produce carbon atoms excited to a high energy level. The carbon atoms deposit on the substrate 10 heated to about 500 deg.C, forming a thin diamond film or an i-carbon film.