| 摘要 |
PROBLEM TO BE SOLVED: To reduce contact resistance between an n-type GaAs substrate surface and an n-type electrode metal on a II-VI group semiconductor device. SOLUTION: An n-type electrode metal layer 102 is formed on the underside of an n-type GaAs substrate 101. A dummy substrate 103 is layered on a surface for forming electrodes of the n-type GaAs substrate 101. An n-type ZnSe buffer layer 105, an n-type AnMgSSe clad layer 106, a first ZnSSe guide layer 107, a ZnCdSe active layer 108, a second ZnSSe guide layer 109, a p-type ZnMgSSe clad layer 110 and a p-type contact layer 111 are formed on the surface of the n-type GaAs substrate 101. Since a dummy substrate is stacked, the n-type electrode metal is annealed an a high temperature, and the contact resistance is reduced as a result. In this way, a blue and blue green semiconductor light- emitting device of high degree of reliability operating at low voltage is realized. |
