| 摘要 |
PROBLEM TO BE SOLVED: To polish the surface of an SiO2 insulating film or the like at a high speed without flaws by a method in which cerium oxide abrasive particle which contains primary cerium oxide powder, whose grain size is prescribed by the observation with a transmission electron microscope, at a prescribed ratio is dispersed into dispersion medium to contain abrasive slurry, and the surface of the insulating film is polished with the above abrasive slurry. SOLUTION: Cerium oxide particle is prepared through a low-temperature burning process so as to be kept low in crystallinity as far as possible, and cerium oxide abrasive particle which contains 90% or above primary particle, whose grain size ranges from 10-100nm by the observation with a transmission electron microscope, is dispersed into medium to obtain abrasive slurry, and the surface of an SiO2 insulating film can be polished at a high speed without flaws by the use of the above abrasive slurry. |
