| 摘要 |
PROBLEM TO BE SOLVED: To reduce the occurrence of pits on a laminated layer deposited on a gallium nitride-based low-temperature buffer layer and to suppress or reduce the occurrence of steps on the surface. SOLUTION: In a gallium nitride-based compound semiconductor epitaxial wafer, a thin film buffer layer composed of grown islands of a gallium nitride- based compound semiconductor is formed on a crystalline substrate and the distance between each island is adjusted to <=45nm. It is preferable, in addition, to control the height of each grown island constituting the buffer layer to <=40nm. |
