| 摘要 |
PROBLEM TO BE SOLVED: To provide a transparent conductive film having a high visible ray transmittance and easy controllability for the etching speed based upon a change of the metal component composition and provide a target material for use in manufacturing the film, which can not be achieved with a conventional Sn- added Zn-In-O or Zn2 In2 O5 oxide transparent conductive film either amorphous or crystalline. SOLUTION: A composite metal oxide film containing In, Sn, and Zn forms at least one sort of In4 Sn3 O12 crystal or fine crystals or amorphous substance composed of In, Sn, and Zn, where the Sn content as given by Sn×100/(In+Sn) should range from 40 to 60 atomic % while the Zn content given by Zn×100/(In+Zn) range from 10 to 90 atomic %, preferably from 30 to 70 atomic %.
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