| 摘要 |
PROBLEM TO BE SOLVED: To suppress influence of degasification. etc.. caused by a change in the gas concentration or in the surface condition of the inner wall of a processing chamber upon the production amount of various ions produced by an ion source. SOLUTION: The inner wall 5a of a processing chamber 5 is formed from a metal material whose surface roughness is polished to under 10μm, and thereby the gas adsorption is lessened, and variation in the degree of vacuum in the chamber 5 due to gas generation (degasification) from the surface layer of the inner wall 5a is lessened even through a long period of service, and change in the production amount of various ions produced by an ion source 1 is suppressed. It is also effective to cover the inner wall of the chamber 5 with a material of lesser gas adsorption or to perform temp. control of the inner wall of the processing chamber 5. Thereby an ion doping processing can be carried out with good reproducibility and stability, and an ion doping device can be accomplished capable of making precise control of the doping amount.
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