| 摘要 |
PROBLEM TO BE SOLVED: To enable a semiconductor device to be lessened in number of manufacturing processes and enhanced in throughput by a method, wherein an interlayer insulating film which is formed of high-molecular resin that contains imide rings is formed so as to cover a gate electrode, a source region, and a drain region. SOLUTION: A high-melting metal shading film 102 is formed on a transparent substrate 101 corresponding to each TFT 100, and an insulating film 103 is formed covering the shading film 102. A semiconductor layer 104, a gate insulating film 105, and a gate electrode 106 which confronts the channel region 104a of the semiconductor layer 104 are successively formed on the insulating film 103. Furthermore, an organic insulating film 108 as an interlayer insulating film is formed on all the surface of the gate electrode 106, and a source electrode 110 and a drain electrode 111 are formed on the parts of the organic insulating film 108, corresponding to a source region 104b, and a drain region 104b2 . By this setup, a semiconductor device of this constitution can be lessened in the number of manufacturing processes and enhanced in throughput.
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