| 发明名称 |
Compound semiconductor and thin film solar cell |
| 摘要 |
This invention provides a compound semiconductor which can be used for an absorbing layer of a thin-film solar cell. The compound semiconductor is characterized in that it belongs to a I @ 2m space group with a stannic structure and is represented by the formula Cu2-3X(In1-YGaY)2+X(Se1-ZSZ)4 (0<X<0.5, 0</=Y</=1, 0</=Z</=0.5). It has a larger band gap than the corresponding compound semiconductor having a chalcopyrite structure. <IMAGE> |
| 申请公布号 |
EP0828299(A2) |
申请公布日期 |
1998.03.11 |
| 申请号 |
EP19970115134 |
申请日期 |
1997.09.02 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
WADA, TAKAHIRO;NISHITANI, MIKIHIKO;KOHARA, NAOKI;NEGAMI, TAKAYUKI |
| 分类号 |
C01B19/00;H01L21/20;H01L31/032;H01L31/0336;H01L31/04 |
主分类号 |
C01B19/00 |
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