发明名称 SEMICONDUCTOR DOPING PROCESS
摘要 A doping process, including applying pressure to at least one first phase of a semiconductor containing an electrically inactive dopant and removing the pressure to cause at least one phase transformation of the semiconductor to at least one second phase, wherein the at least one phase transformation activates the dopant so that the at least one second phase includes at least one doped phase of the semiconductor in which the dopant is electrically active.
申请公布号 US2010084613(A1) 申请公布日期 2010.04.08
申请号 US20070518634 申请日期 2007.12.13
申请人 WRIOTA PTY LTD. 发明人 MAXWELL IAN ANDREW;WILLIAMS JAMES STANISLAUS;BRADBY JODIE ELIZABETH;RUFFELL SIMON;FUJISAWA NAOKI
分类号 H01B1/04;H01L21/263;H01L21/66 主分类号 H01B1/04
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