发明名称 |
SEMICONDUCTOR DOPING PROCESS |
摘要 |
A doping process, including applying pressure to at least one first phase of a semiconductor containing an electrically inactive dopant and removing the pressure to cause at least one phase transformation of the semiconductor to at least one second phase, wherein the at least one phase transformation activates the dopant so that the at least one second phase includes at least one doped phase of the semiconductor in which the dopant is electrically active.
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申请公布号 |
US2010084613(A1) |
申请公布日期 |
2010.04.08 |
申请号 |
US20070518634 |
申请日期 |
2007.12.13 |
申请人 |
WRIOTA PTY LTD. |
发明人 |
MAXWELL IAN ANDREW;WILLIAMS JAMES STANISLAUS;BRADBY JODIE ELIZABETH;RUFFELL SIMON;FUJISAWA NAOKI |
分类号 |
H01B1/04;H01L21/263;H01L21/66 |
主分类号 |
H01B1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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