发明名称 |
Method of producing an electro-optical device |
摘要 |
A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.
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申请公布号 |
US5726077(A) |
申请公布日期 |
1998.03.10 |
申请号 |
US19950459925 |
申请日期 |
1995.06.02 |
申请人 |
FRONTEC INCORPORATED |
发明人 |
KAWAHATA, KEN;NAKANO, AKIRA;FUKUI, HIROFUMI;HEBIGUCHI, HIROYUKI;YAMAMOTO, KENJI;IWASAKI, CHISATO |
分类号 |
G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L29/78;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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