| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electron mask, an aligner using the electron mask and the aligning method capable of improving the positional accuracy of a pattern in a memory cell area and a array area. SOLUTION: As for the electron beam mask equipped with a variable formation aperture 107 for forming the electron beam 111 to a desired shape and a plurality of pattern groups of transferring apertures 108, position detection marks for recognizing respective positions of the apertures 107 and the apertures 108 groups are separately formed near the aperture 107 and a plurality of group of the transferring apertures 108, and each position detecting mark is detected and the position of the mark is recognized by an optical system 103 installed above an electron beam mask stage, then, the mask is provided with a function of respective correcting the relative transfer position of the variable formation aperture 107 and the plurality of transferring apertures 108 groups on a substrate to be aligned 110.</p> |
