发明名称 Method of manufacturing phase-shifting mask comprising a light shield pattern on a phase-shifting attenuatting layer
摘要 A phase-shifting mask which has a supplementary pattern arranged for preventing unwanted constructive interference of light caused when isolated patterns (transparent regions) are arranged adjacently. Also, a method for manufacturing such a phase-shifting mask, including the steps of providing a transparent substrate, a phase-shifting layer having transparent regions formed on the transparent substrate, and a supplementary light shielding patterns formed on the phase-shifting layer between the transparent regions.
申请公布号 US5725969(A) 申请公布日期 1998.03.10
申请号 US19950576897 申请日期 1995.12.22
申请人 LG SEMICON CO., LTD. 发明人 LEE, JUN SEOK
分类号 G03F1/08;G03F1/00;G03F1/14;G03F1/29;G03F1/32;G03F1/36;G03F1/68;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
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