发明名称 SILICON NITRIDE SINTERED COMPACT AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To produce a thin or thick silicon nitride sintered compact preventing oxidation at low temp. while maintaining high strength at high temp. and capable of exhibiting strength even at low temp. SOLUTION: In this silicon nitride sintered compact contg. silicon nitride and compds. of rare earth elements, Yb and Y are contained as the rare earth elements by 5-7mol% in total (expressed in terms of oxides) in a molar ratio of 4:6 to 9:1 (expressed in terms of oxides), H and J phases are contained as crystals phases at the grain boundaries and the percentage of the H phase is higher than that of the J phase. This sintered compact is produced by adding Yb2 O3 and Y2 O3 as sintering aids to Si3 N4 powder by 5-7mol% in total in a molar ratio of 4:6 to 9:1, mixing and compacting them, sintering the resultant compact at 1,850-1,950 deg.C in an atmosphere of nitrogen and carrying out heat treatment at 1,000-1,500 deg.C for 0.5-10hr in the air.
申请公布号 JPH1059773(A) 申请公布日期 1998.03.03
申请号 JP19960218809 申请日期 1996.08.20
申请人 NGK INSULATORS LTD 发明人 AIHARA YASUFUMI;INOUE KATSUHIRO
分类号 C04B35/584;C04B35/593;C04B41/00;C04B41/50;C04B41/80;C04B41/87 主分类号 C04B35/584
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