| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of number of processes to a minimum and to provide a method with which a contact hole of 0.35μm in caliber can be formed easily in a reliable and accurate manner. SOLUTION: After formation of an insulative film 3, having the etching rate lower than the etching value of an interlayer insulating film 2, on the interlayer insulating film 2 to be formed on a semiconductor substrate or a conductive layer 10, the etching treatment part of the insulative film 3 is formed on an aperture part 12 having a tapered end part 11, and a contact hole 15 is formed by forming a main body part 13 by etching the interlayer insulating film 2 using the aperture part 12, where said end part is formed in taper shape, as a mask. |
