发明名称 |
Method of manufacturing a semiconductor using multi-layer antireflective layer |
摘要 |
In a semiconductor device according to this invention, a first insulating film formed on only a pattern formation conductive film on a semiconductor substrate and having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness of the first insulating film is formed on the semiconductor substrate. A second insulating film having a reflectance which is 25% or more and periodically changes in accordance with a change in film thickness and having a refractive index different from that of the first insulating film is formed on only the first insulating film. A total reflectance of the first and second insulating films is less than 25%. A photosensitive film is formed on the second insulating film and exposed through a reticle to form a predetermined pattern. Etching is performed using the photosensitive film having this pattern to form a conductive pattern.
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申请公布号 |
US5719072(A) |
申请公布日期 |
1998.02.17 |
申请号 |
US19950500835 |
申请日期 |
1995.07.11 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGIURA, SOUICHI;WATANABE, HIDEHIRO;YOSHIDA, SEIKO |
分类号 |
H01L21/28;H01L21/027;H01L21/283;H01L21/302;H01L21/3065;H01L23/528;H01L23/532;(IPC1-7):H01L21/314 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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