发明名称 HIGH PURITY REFRACTORY AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To provide a high purity refractory capable of displaying a desired electrical characteristic without being damaged when used as a tool material for mounting at the time of burning an electronic component by reducing impurity such as SiO2 in an oxide based refractory such as Al2 O3 and ZrO2 . SOLUTION: In the high purity refractory, a refractory compact or sintered body containing mainly SiO2 , Fe2 O3 and alkali or alkaline earth metal oxide as impurities is subjected to a heat treatment under a reducing atmosphere to highly purify at least a surface substantially. The heat treatment is executed preferably at 1,200-1,600 deg.C. Further, at least hydrogen is preferably incorporated as the reductive atmosphere.
申请公布号 JPH1029880(A) 申请公布日期 1998.02.03
申请号 JP19960204303 申请日期 1996.07.15
申请人 TOSHIBA CERAMICS CO LTD 发明人 KOJIMA TAIJI;NIWA SHIGEKI;OKADA YUTAKA;SUZUKI TOSHIYUKI
分类号 C04B41/80;C04B35/622;C04B35/64 主分类号 C04B41/80
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