发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To enable an output buffer to be easily and precisely controlled in switching operation characteristics by a method wherein transfer gates are formed by the use of a ground layer, and the outputs of the transfer gates are temporally shifted so as to control the output, buffer in switching operation characteristics. SOLUTION: An enhancement-mode N-channel transistor 29 and an enhancement-mode P-channel transistor 210 are set different from each other in the width and length of their diffusion layers, whereby the diffusion layers have a certain range of sheet resistivity. The ground diffusion layers of the transistors 29 and 210 are varied in width 21 and length 22 and made to have a certain range of sheet resistivity, and transfer gates 211 and 212 are formed by the use of the ground layers. As mentioned above, the outputs of the transfer gates 211 and 212 are temporally shifted whereby an output buffer 214 can be easily and precisely controlled in switching operation characteristics.
申请公布号 JPH1032255(A) 申请公布日期 1998.02.03
申请号 JP19960187450 申请日期 1996.07.17
申请人 NEC CORP 发明人 TANAKA KENICHI
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L27/04;H01L27/088;H01L27/118;H03K17/04;H03K17/12;H03K17/687;H03K19/0175 主分类号 H01L21/822
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