Verfahren und Vorrichtung zur Herstellung eines Einkristalls

摘要

A process for producing a silicon single crystal by the Czochralski method employs an inert gas purged growth chamber containing first and second inner chambers (14, 15), each delimited by side, cover and bottom walls. The first inner chamber (14) contains the melt-containing crucible (5a) and a heat shield (7) which surrounds the single crystal (3), while the second inner chamber (15) contains a heater (9) for heating the crucible. A first inert gas stream is passed into the first inner chamber through its cover wall and a second inert gas stream is passed into the second inner chamber through its bottom wall, the two streams mixing together at the earliest after leaving the inner chambers. Also claimed is an apparatus for silicon single crystal production.