发明名称 |
Light-emitting diode |
摘要 |
The light-emitting diode consists of a substrate and a light-emission-generating layer located on the substrate and embedded between the cladding layers of a double heterostructure. On the top cladding layer, a current diffusion layer is located on which there is a further contact layer structure. The current diffusion layer is sufficiently thin so as to hardly absorb any light-emission. Thus, it can be economically produced by means of the MOCVD process. At the same time, the contact layer structure is provided with branched and finger-type electrodes for distributing the current together with the current diffusion layer onto the surface of the light-emission-generating layer. However, the structural size of the branched and finger-type electrodes is selected such that these can still be manufactured by the standard processes used in LED manufacture.
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申请公布号 |
US5698865(A) |
申请公布日期 |
1997.12.16 |
申请号 |
US19960631330 |
申请日期 |
1996.04.12 |
申请人 |
TEMIC TELEFUNKEN MICROELECTRONIC GMBH |
发明人 |
GERNER, JOCHEN;GILLESSEN, KLAUS |
分类号 |
H01L33/14;H01L33/38;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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