SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce the broken wire or shorted defectives in the lithography step of forming word lines or bit lines of a DRAM. SOLUTION: A LOCOS oxide film 4 formed on a semiconductor substrate 1 surrounds active regions 6, each having two selective MOSFETs formed symmetrically at the center. Word lines WL forming the gate electrodes of these MOSFETs are linear. A first semiconductor region 16 is formed on the center of the active region 6. A protrusion BLDB of a bit line BL is connected to this region 16 through a first contact hole 21. The pattern of the protrusions BLDB and that of the linear parts of the bit lines BL are formed separately by a two step exposure.