| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor for a DRAM memory cell in which the capacitance of the memory cell is increased by enlarging the electrode surface by performing a photolithographic procedure and etching second and first conductive layers so as to cut grooves in a grid shape in the second and first conductive layers. SOLUTION: A first conductive layer 318 is formed on a dielectric layer 314 and a contact opening 316 is covered. A second conductive layer 320 having a characteristic of a rough surface is deposited on the first conductive layer 318. The first and second conductive layers 318 and 320 are etched by using a photolithographic procedure using a photo mask layer 322. Consequently, deep grooves 319 in a grid shape are formed in the first conductive layer 318. A second dielectric layer 326 is formed on the surface where the first conductive layer 318 with grooves is exposed and a third conductive layer 328 is formed on the surface of the second dielectric layer 326. Thus, the first conductive layer 318, the third conductive layer 328 and the second dielectric layer 326 integrally form two electrode layers and the accumulation dielectric. |
