| 摘要 |
A fabrication method of semiconductor devices having fine self-aligned contact hole despite of narrow the distance between gate electrodes is disclosed. The method comprises the steps of: sequentially forming a gate electrode(4), a first interlayer insulator(5), a first spacer(71), an etching barrier layer(10) and a second spacer(72) on a substrate(1); simultaneously forming an LDD spacer(70) at the region being not formed self-aligned contact and etch-back the second spacer(72) at the region being formed self-aligned contact; and forming contact by etching the remained second spacer(72A) and the etching barrier layer(10) using the first spacer(71) as a stopper. Thereby, it is possible to remove the junction leakage current due to the damage of the etching by forming the self-aligned contact using the etching barrier layer(10).
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