发明名称 METHOD FOR MANUFACTURING METAL WIRING CONTACT
摘要 A method for fabricating contact hole of metal wire is disclosed. The method for fabricating contact hole of metal wire according to the present invention comprises: a) connecting a first polysilicon layer pattern(23) used for a wordline strap with a second polysilicon layer pattern(26) via a first contact hole(25); b) connecting the second polysilicon layer pattern(26) with a third polysilicon layer pattern(30) via a second contact hole(28) formed on an area except for overlapped area with the first contact hole(25); and c) forming a metal wire(29) which is overlapped with the first polysilicon layer pattern(23). Thereby an aspect ratio is decreased and yield and reliability of semiconductor device is improved.
申请公布号 KR0122516(B1) 申请公布日期 1997.11.26
申请号 KR19940004113 申请日期 1994.03.03
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 LEE, BYUNG-RYUL
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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