发明名称 |
METHOD FOR MANUFACTURING METAL WIRING CONTACT |
摘要 |
A method for fabricating contact hole of metal wire is disclosed. The method for fabricating contact hole of metal wire according to the present invention comprises: a) connecting a first polysilicon layer pattern(23) used for a wordline strap with a second polysilicon layer pattern(26) via a first contact hole(25); b) connecting the second polysilicon layer pattern(26) with a third polysilicon layer pattern(30) via a second contact hole(28) formed on an area except for overlapped area with the first contact hole(25); and c) forming a metal wire(29) which is overlapped with the first polysilicon layer pattern(23). Thereby an aspect ratio is decreased and yield and reliability of semiconductor device is improved.
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申请公布号 |
KR0122516(B1) |
申请公布日期 |
1997.11.26 |
申请号 |
KR19940004113 |
申请日期 |
1994.03.03 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
LEE, BYUNG-RYUL |
分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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