发明名称 |
Semiconductor hetero-interface photodetector |
摘要 |
By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created. |
申请公布号 |
AU2739597(A) |
申请公布日期 |
1997.11.26 |
申请号 |
AU19970027395 |
申请日期 |
1997.04.22 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, |
发明人 |
JOHN E. BOWERS;AARON R. HAWKINS |
分类号 |
H01L27/144;H01L31/0216;H01L31/09;H01L31/107 |
主分类号 |
H01L27/144 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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