发明名称 |
A FIELD EFFECT TRANSISTOR OF SIC AND A METHOD FOR PRODUCTION THEREOF |
摘要 |
A transistor of SiC comprises superimposed a drain (13), a highly doped substrate layer (1), a low doped n-type drift layer (2), a p-type base layer being divided into a first lower highly doped base sub-layer (3) and an upper low doped second base sub-layer (4) on top thereof, a highly doped n-type source region layer (6) and a source (11). It also has an insulating layer (8) with a gate electrode (9) thereon arranged on top of the base layer and extending laterally from the source region layer to a n-type layer (7) connected to the drift layer. |
申请公布号 |
WO9736314(A3) |
申请公布日期 |
1997.11.20 |
申请号 |
WO1997SE00449 |
申请日期 |
1997.03.18 |
申请人 |
ABB RESEARCH LIMITED;HARRIS, CHRISTOPHER;BAKOWSKI, MIETEK;GUSTAFSSON, ULF |
发明人 |
HARRIS, CHRISTOPHER;BAKOWSKI, MIETEK;GUSTAFSSON, ULF |
分类号 |
H01L21/04;H01L29/24;H01L29/78 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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