| 摘要 |
PROBLEM TO BE SOLVED: To reduce the area of a memory cell by forming a capacitor which has a perovskite type structure of dielectric film on the epitaxial regions made continuously in the direction of the line or row of a memory cell array, and making lower electrodes double as the plate electrodes of plural capacitors. SOLUTION: An oxide 21 such as MgO, or the like is epitaxially grown on an Si substrate 11, and a kind of noble metal of film such as Pt or the like is epitaxially grown as a lower electrode 22. Then, for example, a BaTiO3 film 23 is epitaxially grown as a perovskite type oxide on the lower electrode 22. Hereby, a highly reliable memory cell excellent in dielectric property of a capacitor and little in dispersion can be manufactured. Moreover, the lower electrode 22 can be epitaxially grown with good adhesion with the base. Then, since this is adopting a structure of forming plural capacitors in one epitaxial region, the area of a memory cell per bit can be made small. |
