SEMICONDUCTOR COMPONENT WITH A SPLIT FLOATING GATE

摘要

In a semiconductor component, in particular an EEPROM, an avalanche breakdown from the buried channel (14) to the substrate (10) is avoided by a local thickening of the gate dielectric (insulating structure 22) at the transition to the tunnel dielectric (18). As a potential barrier is thus created, the gate and tunnel dielectrics may have the same thickness. The space required by such a cell is reduced.