发明名称 Röntgenlithographische Maske, Belichtungsvorrichtung und das Verfahren hierzu
摘要 Disclosed are an X-ray lithography mask, an exposure apparatus and an exposure process such as an X-ray lithography exposure apparatus and an X-ray lithography exposure process. An X-ray lithography mask includes an X-ray transmission membrane, a transfer pattern depicted on the X-ray transmission membrane and a frame for supporting the X-ray transmission membrane. The transfer pattern is depicted on the basis of a changing direction of a film thickness profile of the X-ray transmission membrane. In the exposure apparatus and process, a changing direction of an intensity profile of a radiation light illuminated on an exposure area of a mask is coincident with a changing direction of a film thickness profile of a light transmission membrane on the mask and an illumination time of the radiation light for the exposure area is changed on the basis of the intensity profile of the radiation light and the thickness profile of the light transmission membrane so that the intensity of a transfer pattern image formed by the transmission of the radiation light through the light transmission membrane is rendered uniform. <IMAGE>
申请公布号 DE69220116(T2) 申请公布日期 1997.10.16
申请号 DE1992620116T 申请日期 1992.03.17
申请人 CANON K.K., TOKIO/TOKYO, JP 发明人 HAYASHIDA, MASAMI, C/O CANON KABUSHIKI KAISHA, OHTA-KU, TOKYO, JP;WATANABE, YUTAKA, C/O CANON KABUSHIKI KAISHA, OHTA-KU, TOKYO, JP
分类号 G03F1/16;G03F1/22;G03F7/20;H01L21/027;(IPC1-7):G03F7/20 主分类号 G03F1/16
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