发明名称 GROWTH OF SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for growing a single crystal not cracking. SOLUTION: In this method for growing a single crystal by heating a raw material in a crucible to give a melt and growing the single crystal while pulling up a seed crystal, a large-sized crucible composition >=ϕ120mm crucible diameter is used. After the crucible diameter reaches >= about 30% the inner diameter of the crucible, a condition in which the solid-liquid interface shape is reversed from a protruded state to the melt side to a flat state or a protruded state to the crystal side is set to give the single crystal.
申请公布号 JPH09268095(A) 申请公布日期 1997.10.14
申请号 JP19960077804 申请日期 1996.03.29
申请人 HITACHI CHEM CO LTD 发明人 KURATA YASUSHI;KURASHIGE KAZUHISA;ISHIBASHI HIROYUKI
分类号 C30B15/22;C30B29/34;(IPC1-7):C30B15/22 主分类号 C30B15/22
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