发明名称 High voltage level detection circuit
摘要 <p>For providing a high voltage detector circuit for discriminating whether a voltage supplied to an input terminal (1) is higher or not than a power supply thereof, stably independent of its power supply fluctuation or noises and without problem of gate oxide break because of high voltage; a high voltage detector circuit of the invention comprises: a MOS transistor (P1) with its gate connected to the power supply; a first resistor (R1) connected between a source of the MOS transistor and the input terminal; a second resistor (R2) connected between a drain of the MOS transistor and a ground; and an inverter for outputting inverse logic of a drain voltage of the MOS transistor to an output terminal (OUT). &lt;IMAGE&gt;</p>
申请公布号 EP0798565(A2) 申请公布日期 1997.10.01
申请号 EP19970105418 申请日期 1997.04.01
申请人 NEC CORPORATION 发明人 YANAGISAWA, TOORU
分类号 G05F3/24;G01R19/165;G11C5/14;G11C29/00;G11C29/12;(IPC1-7):G01R19/165 主分类号 G05F3/24
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