| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method, by which the rectifying characteristic of a Schottky barrier diode made of SiC is improved and the Schottky barrier diode in practical use is realized. SOLUTION: In the manufacturing method of a Schottky barrier diode made of SiC, an insulating thin film 2 is formed on the surface of an SiC substrate 1, photoresist 4 is applied to the thin film 2, an electrode shape is patterned and the patterning part of the resist 4 is removed. Then, the insulating thin film at the patterned part is removed, and an electrode 51 is formed. The remaining resist 4 and the electrode material attached on the resist are removed, photoresist is applied to the electrode 51, the electrode shape is patterned, the patterning part of the resist is removed and a second electrode 61 is formed on the electrode 51. The remaining resist 4 and the electrode material attached on the resist are removed, and an electrode is formed on the rear surface. |
